First seen at CES 2013 exhibition, Asus ROG RAIDR solid-state drives are on their final stage of development before an official release in May. Unlike the majority of contemporary SSD solutions in the market, the product from Asus features quite distinct form-factor, similar to expansion cards. The new drive is known to employ PCI Express 2.0 x2 interface with the support of x16/x8/x4 slots.



According to the preliminary data, ROG RAIDR solid-state drives will be available in two capacity variations – 120 GB and 240 GB. Both models will run under a couple of SandForce SF2281 controllers, comprised into RAID 0 array. MLC NAND flash-memory chips from Toshiba (designed under 19 nm technological process) will be the heart of revolutionary SSDs. Irrespective of the overall differentiation, ROG RAIDR will support a range of technologies traditional SSDs support, including S.M.A.R.T., TRIM and NCQ.


With the respect to the performance, both drives will be able to demonstrate …

The speed at which brand products based on recently released GeForce GTX Titan adapter strike the market, makes all Internet users, enthusiasts and IT professionals marvel. This fact is explained by some outstanding characteristics of Nvidia’s creation that offer unmatched and unseen earlier performance. Due to the integration of the most powerful GPU, this adapter brings gaming experience to a new level, creating a real breakthrough in graphics industry.



What Makes ‘Titan’ So Special?


Graphics adapter Nvidia GeForce GTX Titan is equipped with a powerful GK110 GPU. It consists of fifteen SMX current multiprocessors, each of which employs 64 CUDA FP64 cores. This allows the adapter to achieve 4.5 TFLOPS speed in computing operations with a single precision and up to 1.5 TFLOPS speed in computing with a dual precision. Still, this adapter takes high-end performance in gaming environment as a prior task. The minimal operational clock frequency is established at 836 MHz, …

The past several days were marked by the Intel's announcement about the celebration of a contract with ASML company. Such step has been dictated by the company's intentions to invest into the development of 450 mm wafers and EUV technologies. In accordance with the preliminary estimates, the general investment rate will reach $4.1 billion. The major target of the cooperation is to decrease the term of lithography equipment commissioning by two years, and stimulate the development of technologies targeted at 450 mm wafers. The implementation of the predesigned plans will allow the manufacturers of semiconductor components to receive a range of benefits, among which is the cut of expenses.



With the purpose to facilitate in the solution of this technological problem, Intel will take part in a dedicated program. This program includes financial backup of scientific and research projects, as well as, equity investing campaigns in ASML.


The initial stage of this program …